Heterojunction Diodes Comprising p-Type Ultrananocrystalline Diamond Films 
Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates

Katamune, Yūki; Ohmagari, Shinya; Al-Riyami, Sausan; Takagi, Seishi; Shaban, Mahmoud; Yoshitake, Tsuyoshi

doi:10.7567/JJAP.52.065801

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Heterojunction Diodes Comprising p-Type Ultrananocrystalline Diamond Films Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates

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Katamune, Yūki
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Ohmagari, Shinya
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Al-Riyami, Sausan
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Takagi, Seishi
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Shaban, Mahmoud
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Yoshitake, Tsuyoshi
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Katamune, Y., Ohmagari, S., Al-Riyami, S., Takagi, S., Shaban, M., Yoshitake, T. (2013): Heterojunction Diodes Comprising p-Type Ultrananocrystalline Diamond Films Prepared by Coaxial Arc Plasma Deposition and n-Type Silicon Substrates. - Japanese Journal of Applied Physics, 52, 6R.
https://doi.org/10.7567/JJAP.52.065801

Cite as: https://gfzpublic.gfz-potsdam.de/pubman/item/item_1504318

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