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Abstract:
Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.
