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Hexagonal Si‐Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature

Authors

Serghiou,  George
External Organizations;

Odling,  Nicholas
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/persons/resource/hanni

Reichmann,  Hans-Josef
3.6 Chemistry and Physics of Earth Materials, 3.0 Geochemistry, Departments, GFZ Publication Database, Deutsches GeoForschungsZentrum;

Ji,  Gang
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/persons/resource/mkoch

Koch-Müller,  M.
3.6 Chemistry and Physics of Earth Materials, 3.0 Geochemistry, Departments, GFZ Publication Database, Deutsches GeoForschungsZentrum;

Frost,  Daniel J.
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Wright,  Jonathan P.
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Boehler,  Reinhard
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Morgenroth,  Wolfgang
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Citation

Serghiou, G., Odling, N., Reichmann, H.-J., Ji, G., Koch-Müller, M., Frost, D. J., Wright, J. P., Boehler, R., Morgenroth, W. (2021 online): Hexagonal Si‐Ge Class of Semiconducting Alloys Prepared Using Pressure and Temperature. - Chemistry - A European Journal.
https://doi.org/10.1002/chem.202102595


Cite as: https://gfzpublic.gfz-potsdam.de/pubman/item/item_5007599
Abstract
Multi-anvil and laser-heated diamond anvil methods are used to subject Ge and Si mixtures to pressures and temperatures of between 12 and 17 GPa and 1500 – 1800 K, respectively. Synchrotron angle dispersive X-ray diffraction, precession electron diffraction and chemical analysis using electron microscopy, reveal recovery at ambient pressure of hexagonal Ge-Si solid solutions (P63/mmc). Taken together, the multi-anvil and diamond anvil results reveal that hexagonal solid solutions can be prepared for all Ge-Si compositions. This hexagonal class of solid solutions constitutes a significant expansion of the bulk Ge-Si solid solution family, and is of active interest for optoelectronic applications.