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  ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates

Kozlovskii, V. I., Trubenko, P. A., Korostelin, Y. V., Roddatis, V. (2000): ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates. - Semiconductors, 34, 10, 1186-1192.
https://doi.org/10.1134/1.1317581

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Item Permalink: https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693958 Version Permalink: https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693958_2
Genre: Journal Article

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 Creators:
Kozlovskii, V. I.1, Author
Trubenko, P. A.1, Author
Korostelin, Y. V.1, Author
Roddatis, Vladimir2, Author              
Affiliations:
1External Organizations, ou_persistent22              
20 Pre-GFZ, Departments, GFZ Publication Database, Deutsches GeoForschungsZentrum, ou_146023              

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 Abstract: Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe substrates. These mirrors are composed of 10.5 and 20 pairs of alternating quarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the wavelengths of 530 and 560 nm, respectively, which fall in the transparency region of the substrate. These structures were studied by low-temperature cathodoluminescence, atomic-force microscopy, and transmission electron microscopy. The maximum of the reflection coefficient was 78% for a 20-pair mirror and 66% for a 10.5-pair mirror. This result is interpreted in terms of a model that takes into account the roughness of the interlayer boundaries. (C) 2000 MAIK "Nauka/Interperiodica".

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 Dates: 2000
 Publication Status: Finally published
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 Rev. Type: -
 Identifiers: Other: WOS:000089524500019
DOI: 10.1134/1.1317581
ISSN: 1063-7826
URI: ://WOS:000089524500019
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Title: Semiconductors
Source Genre: Journal, SCI, Scopus, p3
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Pages: - Volume / Issue: 34 (10) Sequence Number: - Start / End Page: 1186 - 1192 Identifier: CoNE: https://gfzpublic.gfz-potsdam.de/cone/journals/resource/1911184