ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy 
on ZnSe substrates

Kozlovskii, V. I.; Trubenko, P. A.; Korostelin, Y. V.; Roddatis, Vladimir

doi:10.1134/1.1317581

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ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates

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Kozlovskii, V. I.
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Trubenko, P. A.
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Korostelin, Y. V.
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Roddatis, Vladimir
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Zitation

Kozlovskii, V. I., Trubenko, P. A., Korostelin, Y. V., Roddatis, V. (2000): ZnMgSe/ZnCdSe-based distributed Bragg mirrors grown by molecular-beam epitaxy on ZnSe substrates. - Semiconductors, 34, 10, 1186-1192.
https://doi.org/10.1134/1.1317581

Zitierlink: https://gfzpublic.gfz-potsdam.de/pubman/item/item_4693958

Zusammenfassung

Molecular-beam epitaxy was used to grow distributed Bragg mirrors on ZnSe substrates. These mirrors are composed of 10.5 and 20 pairs of alternating quarter-wave ZnMgSe and ZnCdSe layers with reflectance peaks at the wavelengths of 530 and 560 nm, respectively, which fall in the transparency region of the substrate. These structures were studied by low-temperature cathodoluminescence, atomic-force microscopy, and transmission electron microscopy. The maximum of the reflection coefficient was 78% for a 20-pair mirror and 66% for a 10.5-pair mirror. This result is interpreted in terms of a model that takes into account the roughness of the interlayer boundaries. (C) 2000 MAIK "Nauka/Interperiodica".