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New techniques for high pressure falling sphere viscosimetry in DIA-type large volume presses

Urheber*innen
/persons/resource/hjmuel

Müller,  Hans-Joachim
Scientific Infrastructure, Scientific Infrastructure and Plattforms, GFZ Publication Database, Deutsches GeoForschungsZentrum;

Beckmann,  Felix
External Organizations;

Dobson,  David P.
External Organizations;

Hunt,  Simon A.
External Organizations;

/persons/resource/lathe

Lathe,  Christian
CGS Centre for Geological Storage, Geoengineering Centres, GFZ Publication Database, Deutsches GeoForschungsZentrum;

/persons/resource/stroncik

Stroncik,  Nicole Alexandra
0 Pre-GFZ, Departments, GFZ Publication Database, Deutsches GeoForschungsZentrum;

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Zitation

Müller, H.-J., Beckmann, F., Dobson, D. P., Hunt, S. A., Lathe, C., Stroncik, N. A. (2014): New techniques for high pressure falling sphere viscosimetry in DIA-type large volume presses. - High Pressure Research, 34, 3, 345-354.
https://doi.org/10.1080/08957959.2014.950262


Zitierlink: https://gfzpublic.gfz-potsdam.de/pubman/item/item_838898
Zusammenfassung
Here we report recent technical advances that enable viscosity measurements in two DIA-type multi-anvil apparatus with a maximum of 250 tons and 1750 tons. We anticipate that this system will enable viscosity measurements for the pressures up to about 30 GPa. The deformation of the cell assemblies were analyzed by X-ray absorption tomography at beamline W II at DESY/HASYLAB after the high pressure runs. This analysis gave considerable insights into strategies for improving the cell assembly with the result that the optimized assemblies could be used at much higher pressures without blow-outs. We demonstrate using of X-ray transparent cubic boron nitride-anvils (single-stage DIA) and slotted carbide anvils (double-stage DIA) to make the whole melting chamber accessible for the high pressure X-radiography system. Results are demonstrated with viscosity measurements following Stokes’ Law by evaluation of X-radiography sequences taken by a camera equipped with a charge-coupled device sensor (CCD-camera) at pressures of 5 GPa as well as 10 GPa and temperatures of 1890 K.