Heterojunction Diodes Comprised of n-Type Silicon and p-Type 
Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite

Ohmagari, Shinya; Al-Riyami, Sausan; Yoshitake, Tsuyoshi

doi:10.1143/JJAP.50.035101

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Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite

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Ohmagari, Shinya
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Al-Riyami, Sausan
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Yoshitake, Tsuyoshi
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Ohmagari, S., Al-Riyami, S., Yoshitake, T. (2011): Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite. - Japanese Journal of Applied Physics, 50, 3, 035101.
https://doi.org/10.1143/JJAP.50.035101

Cite as: https://gfzpublic.gfz-potsdam.de/pubman/item/item_1504333

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