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Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite

Authors

Ohmagari,  Shinya
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Al-Riyami,  Sausan
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Yoshitake,  Tsuyoshi
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Citation

Ohmagari, S., Al-Riyami, S., Yoshitake, T. (2011): Heterojunction Diodes Comprised of n-Type Silicon and p-Type Ultrananocrystalline Diamond/Hydrogenated Amorphous Carbon Composite. - Japanese Journal of Applied Physics, 50, 3, 035101.
https://doi.org/10.1143/JJAP.50.035101


Cite as: https://gfzpublic.gfz-potsdam.de/pubman/item/item_1504333
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